Departments
Investigation of the radiation hardness of GaAs:Cr semiconductor detectors irradiated with fast neutrons at the reactor IBR-2
- Department: DSC (НЭОКС)
- Author: Bulavin/Булавин M. V.
- Year: 2020
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DOI:
https://www.researchgate.net/publication/347802680_Investigation_of_the_radiation_hardness_of_GaAsCr_semiconductor_detectors_irradiated_with_fast_neutrons_at_the_reactor_IBR-2
- REFERENCES: Journal of Physics Conference Series, ICPPA 2020, 1690 (2020) 012042, DOI: 10.1088/1742-6596/1690/1/012042
U. Kruchonak, S. Abou El-Azm, G. Shelkov, M. Gostkin, A.Guskov, A. Sheremetyeva, N.Zamiatin, A. Zhemchugov
ОИЯИ ИБР-2