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  • Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

Department: DNP (ОЯФ)
Year: 2024
DOI: DOI https://doi.org/10.1063/5.0231390
REFERENCES: APL Mater. 1 December 2024; 12 (12): 121121

A. Y. Polyakov, L. A. Alexanyan, I. V. Schemerov, A. A. Vasilev, A. V. Chernykh (NUST MISIS, Moscow, Russia); A. Ivanov, N. Talnishnikh, A. Chernyakov, A. L. Zakgeim (Submicron Heterostructures for Microelectronics Research and Engineering Center RAS, St Petersburg, Russia); N. M. Shmidt (Ioffe Institute, St Petersburg, Russia); P. B. Lagov, Yu. S. Pavlov (A. N. Frumkin Institute of Physical Chemistry and Electrochemistry, Moscow, Russia); Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton (University of Florida, USA)