Departments
Proton damage effects in double polymorph ?/?-Ga2O3 diodes
- Department: DNP (ОЯФ)
- Author: Doroshkevich/Дорошкевич A. S., Isaev/Исаев R. S.
- Year: 2024
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DOI:
https://doi.org/10.1039/D3TC04171A
- REFERENCES: Polyakov, A. Y., Vasilev, A. A., Kochkova, A. I., Shchemerov, I. V., Yakimov, E. B., Miakonkikh, A. V., Chernykh, A. V., Lagov, P. B., Pavlov, Y. S., Doroshkevich, A. S., Isaev, R. S., Romanov, A. A., Alexanyan, L. A., Matros, N., Azarov, A., Kuznetsov, A., & Pearton, S. (2024). Proton damage effects in double polymorph ?/?-Ga2O3 diodes. Journal of Materials Chemistry C, 12(3), 1020–1029.
Alexander Y. Polyakov, Anton A. Vasilev, Anastasiia I. Kochkova, Ivan V. Shchemerov, Eugene B. Yakimov, Alexei V. Chernykh, Petr B. Lagov, Andrei A. Romanov, Luiza A. Alexanyan Nikolai Matros (National University of Science and Technology MISIS, Russia); Andrej V. Miakonkikh (Valiev Institute of Physics and Technology, Russia); Yrii S. Pavlov (A. N. Frumkin Institute of Physical Chemistry and Electrochemistry, Russia); Alexander Azarov, Andrej Kuznetsov (University of Oslo, Norway); Stephen Pearton (University of Florida, USA)