Departments
Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
- Department: DNP (ОЯФ)
- Author: Doroshkevich/Дорошкевич A. S., Isaev/Исаев R. S.
- Year: 2024
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DOI:
https://doi.org/10.1038/s41598-024-78531-y
- REFERENCES: Sci Rep 14, 27936 (2024)
A.Y. Polyakov, D.S. Saranin, I.V. Shchemerov, A.A. Vasilev, A.A. Romanov, A.I. Kochkova, P. Gostischev, A.V. Chernykh, L.A. Alexanyan, N.R. Matros, A.M. Kislyuk (NUST MISIS, Moscow, Russia); P. B. Lagov, Yu. S. Pavlov (A. N. Frumkin Institute of Physical Chemistry and Electrochemistry, Moscow, Russia); E.B. Yakimov (Institute of Microelectronics Technology and High Purity Materials, Chernogolovka, Russia); S. J. Pearton (University of Florida, USA)